Empirical basis large signal model of GaN HEMT based on nonlinear resistance

In order to achieve the purpose of accurately establishing the large-signal model of GaN high electron mobility transistors (HEMTs), an empirical-based large-signal model of GaN high-electron mobility transistors based on nonlinear resistance is proposed. The resistance characteristics under high drain bias and high current density is analyzed, and the nonlinear resistance model controlled by the drain-source current is embedded into the empirical large-signal model. Combing Matlab and ADS to extract the initial value of the model, a complete large-signal symbol definition model is established in ADS . Select GaN HEMTs with a gate length of 0.25 μm and a gate width of 2×200 μm, 2×250 μm, 4×200 μm for DC output characteristics and large signal output characteristics simulation verification. The simulation result proves that the model is in good agreement with the test data. This large-signal model improves the physical characteristics of the experience-based large-signal model, and has high accuracy and good scalability.