Temperature effect on electromagnetic sensitivity of SRAM chips in bulk Si and SOI technologies

Considering the complexity of the practical application environment of the chip, the effects of temperature on the sensitivity of static random access memory (SRAM) chips with bulk silicon (Si) and silicon on insulator (SOI) technologies were tested and studied. According to the similarities and differences of metal oxide semiconductor (MOS) devices under two technologies, the temperature effects of MOS devices under two technologies were compared and analyzed. A testing platform was built to evaluate the effect of temperature and electromagnetic interference (EMI) on SRAM by combining the temperature chamber and direct power injection (DPI) method test equipment. Through theoretical and experimental research, it is found that the sensitivity thresholds of SRAM memory chips of different technologies will increase with the increase of temperature, and the sensitivity threshold of SOI technology after 100 MHz is generally larger than that of Si technology, which has certain significance for the study of electromagnetic compatibility of SOI and Si technologies integrated circuits in high and low temperature environments.