Abstract: This paper introduces the electrostatic discharge (ESD) pulse which is selected as the typical source to find out the conducting rules of thyristors in these examinations. The ESD sensitivity characteristics of the silicon controlled rectifier (SCR) with low current is compared and analyzed. The failure mode of the SCR confirms that the gate is out of operation, or the circuit between the Anode and the cathode is broken. It has been found that the conduction time of the SCR triggered by dV/dt is only related to the structure and material properties of the SCR itself as well as the anode voltage. Through the comparative study in square wave pulse injected tests, we find that the conduction time of the SCR triggered by dV/dt under the ESD conditions is only related to the ESD injected voltage, and the higher the injected voltage is, the shorter the conduction time.