Abstract: To study the influence and mechanism of transient electromagnetic pulse (EMP) fault injection on integrated circuits, a total-solid-state nanosecond EMP generator based on the Marx circuit and MOSFET switching characteristics is developed. Based on the proposed HSPICE simulation equivalent model, the impacts of the main parasitic parameters of the generator circuit on the MOSFET switching characteristics are analyzed. A mathematical model is then established, which provides design guidance for the development of EMP generator. Experimental results show that the accuracy of the established mathematical model is 96.7%; The EMP generator based on two-stage Marx circuit has the capability of producing pulse signal with adjustable amplitude from 0 to 100 V, pulse width from 200 ns to 2 070 ns and the fastest falling edge of 32 ns, the induction electromotive force of 1 600 mV can be measured on the measurement coil at 5 mm below the electromagnetic probe, and the fault can be induced to the chip by using this induction electromotive force.