周长林, 梁臻鹤, 余道杰, 钊守国, 钱志升. 数字信号控制器电磁敏感度的环境温度影响研究[J]. 电波科学学报, 2016, 31(6): 1053-1059. doi: 10.13443/j.cjors.2016082401
      引用本文: 周长林, 梁臻鹤, 余道杰, 钊守国, 钱志升. 数字信号控制器电磁敏感度的环境温度影响研究[J]. 电波科学学报, 2016, 31(6): 1053-1059. doi: 10.13443/j.cjors.2016082401
      ZHOU Changlin, LIANG Zhenhe, YU Daojie, ZHAO Shouguo, QIAN Zhisheng. Temperature effects on electromagnetic susceptibility of digital signal controller[J]. CHINESE JOURNAL OF RADIO SCIENCE, 2016, 31(6): 1053-1059. doi: 10.13443/j.cjors.2016082401
      Citation: ZHOU Changlin, LIANG Zhenhe, YU Daojie, ZHAO Shouguo, QIAN Zhisheng. Temperature effects on electromagnetic susceptibility of digital signal controller[J]. CHINESE JOURNAL OF RADIO SCIENCE, 2016, 31(6): 1053-1059. doi: 10.13443/j.cjors.2016082401

      数字信号控制器电磁敏感度的环境温度影响研究

      Temperature effects on electromagnetic susceptibility of digital signal controller

      • 摘要: 针对典型数字信号控制器(Digital Signal Controller, DSC)的电磁兼容问题, 提出了电磁特性与温度特性相结合的分析方法, 研究了环境温度对其传导电磁敏感度的影响.结合电磁敏感度行为级模型结构, 分析了电磁干扰的作用机制, 导出了DSC中金属-氧化物-半导体(Metal-Oxide-Semiconductor, MOS)器件阈值电压和迁移率随环境温度的变化关系;利用直接功率注入与环境温度联合控制技术, 从实验和仿真两个方面分析了模型各部分特征参数在不同温度下的变化, 揭示了电磁敏感度在不同环境温度下变化的内在因素, 并测试了不同温度下典型DSC的电磁敏感度阈值.结果表明, DSC敏感度行为单元中MOS器件阈值电压和迁移率在不同温度下的变化, 会造成其电磁敏感度随环境温度产生显著漂移.

         

        Abstract: Due to the electromagnetic compatibility problems of a typical digital signal controller (DSC), a method that analyzes the electromagnetic characteristics and temperature characteristics simultaneously is presented. The ambient temperature effect on electromagnetic susceptibility is studied. Based on the structure of behavior electromagnetic susceptibility model, the mechanism of electromagnetic interference is analyzed, and the influence which ambient temperature exerts on the mobility and threshold voltage of metal-oxide-semiconductor (MOS) transistors in DSC is derived. Combining the method of direct power injection and temperature control, the varieties of characteristic parameters of each part in susceptibility model at different temperatures is measured and simulated, revealing the internal factors of the susceptibility changes. Then, the threshold of DSC electromagnetic susceptibility is measured. Results show that the mobility and threshold voltage of MOS transistors in DSC immunity behavior is changed with ambient temperatures, which leads to the drift of DSC electromagnetic susceptibility.

         

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