高隔离度X频段双极化微带天线设计

      Design of a high-isolation X-band dual-polarized microstrip antenna

      • 摘要: 针对X波段雷达与通信系统对天线收发高隔离度的严苛要求,提出了一种具有高隔离度性能的双极化微带天线。该天线采用混合介质层叠架构,通过引入空气层降低谐振腔Q值以拓展带宽。在去耦方面,首先利用非接触式T型馈电从物理层面切断直流传导路径,降低源端的初始互耦;其次,提出正交排布的双H型缝隙结构,利用磁流正交性抑制感性耦合;最后,基于基片集成波导(substrate integrated waveguide, SIW)原理,在基板内部构建多层级金属化过孔阵列(虚拟电壁),强制边界切向电场为零,有效阻断了基板模与表面波的横向传播及边缘绕射。实测与仿真结果基本一致,验证了结果的正确性。实测结果表明,该天线两端口有效阻抗带宽(S11/S22<–10 dB)分别为9.15~10.83 GHz和8.98~10.71 GHz,且在9.43~10.07 GHz和9.40~10.16 GHz内电压驻波比(voltage standing wave ratio, VSWR)均优于1.5;带内增益特性平坦稳定,实测峰值增益达8.9 dBi;工作频段内端口平均隔离度优于54 dB(最小隔离度46 dB);具有优异的交叉极化鉴别率。该设计在保持天线结构紧凑的同时,实现了高隔离度与稳定辐射特性的平衡,为解决双极化天线的互耦问题提供了一种高效可行方案。

         

        Abstract: A high-isolation dual-polarized microstrip antenna featuring a multi-level decoupling strategy is proposed for X-band applications. To enhance bandwidth and suppression, a hybrid multilayer architecture with an air gap is employed. The design integrates non-contact T-shaped feeds, orthogonal dual H-shaped slots, and substrate integrated waveguide(SIW) based virtual electric walls. These features collaboratively eliminate direct conduction paths, exploit magnetic current orthogonality, and block substrate mode propagation. Measured results validate that the effective impedance bandwidths (S11/S22 < –10 dB) are 9.15–10.83 GHz and 8.98–10.71 GHz. The voltage standing wave ratio(VSWR) remains better than 1.5 within 9.43–10.07 GHz and 9.40–10.16 GHz. The antenna exhibits a stable peak gain of 8.9 dBi, with an average port isolation superior to 54 dB (minimum 46 dB) and excellent cross-polarization discrimination. This compact design offers a robust solution for balancing high isolation with stable radiation characteristics.

         

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